University of Messina
New directions for microwave and THz detectors based on spintronic diodes
Microwave detectors based on the spin-torque diode effect are among the key emerging spintronic devices. By utilizing the spin of electrons in addition to their charge, they have the potential to overcome the theoretical performance limits of their semiconductor (Schottky) counterparts. In the first part of the talk, I will discuss our recent results in the field of microwave detectors based on spin diodes.1 Those devices realized with magnetic tunnel junctions exhibit high-detection sensitivity >200kV/W at room temperature, without any external bias fields, and for low-input power (micro-Watts or lower).2 This sensitivity, achieved taking advantage of the injection locking, is significantly larger than both biased state- of-the-art-Schottky diode detectors and other existing spintronic diodes. Another application of spintronic diodes is the electromagnetic energy harvesting. Here I will show the development of a bias-field-free spin- torque diodes that could be an efficient harvester of broadband ambient RF radiation, capable to efficiently harvest microwave powers of microWatt and below and to power a black phosphorous nanodevice. Finally, the talk will discuss the promising directions of THz detectors based on antiferromagnetic materials including their unique properties such as resonance response and tunability and the remaining challenges to face.
1. Fang, B. et al. Giant spin-torque diode sensitivity in the absence of bias magnetic field. Nat. Commun. 7, (2016).
2. Zhang, L. et al. Ultrahigh detection sensitivity exceeding 10 5 V/W in spin-torque diode. Appl. Phys. Lett. 113, 102401 (2018).
3. Fang, B. et al. Experimental Demonstration of Spintronic Broadband Microwave Detectors and Their Capability for Powering Nanodevices. Phys. Rev. Appl. 11, 1 (2019).